Epitaxial graphene on 6H-SiC and Li intercalation

Charge neutrality in epitaxial graphene on 6H-SiC(0001) via nitrogen intercalation

Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling.

The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we have studied the transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydr...

Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001).

Ridges are observed on epitaxial graphene on 6H-SiC(0001) by scanning tunneling microscopy (STM). Atomic resolution imaging reveals that they are in fact bulged regions of the graphene layer, occurring as a result of bending and buckling to relieve the compressive strain. Furthermore, their length, direction, and distribution can be manipulated, and new ones can even be created by the tip-surfa...

Studies of Li intercalation of hydrogenated graphene on SiC(0001)

The effects of Li deposition on hydrogenated bilayer graphene on SiC(0001) samples, i.e. on quasi-freestanding bilayer graphene samples is studied using low energy electron microscopy, micro-low-energy electron diffraction and photoelectron spectroscopy. After deposition, some Li atoms form islands on the surface creating defects that are observed to disappear after annealing. Some other Li ato...

Micro-Raman analysis of the influence of hydrogen intercalation on the epitaxial graphene grown on 4H-SiC(0001) substrate K.Grodecki

It is commonly accepted that properties of epitaxial graphene (EG) grown on SiC are determined by interaction with substrate. It was found, that hydrogen intercalation of EG grown on SiC(0001) substrates by sublimation is a promising method to increase the mobility of carriers [1]. As verified by Raman spectroscopy [2] sublimation grown samples show much stronger interaction with the SiC substr...